Scanning Capacitance Microscopy: And Spectroscopy On Semiconductor Materials (German Edition)

Scanning Capacitance Microscopy: And Spectroscopy On Semiconductor Materials (German Edition)

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In this PhD-thesis, Scanning Capacitance Microscopy(SCM) and Scanning Capacitance Spectroscopy (SCS) was appliedto investigate various silicon samples. SCM is used to investigatethe electrical behaviour of samples with a lateral resolution below100 nm. The work is divided into 3 major experimental parts: (1)the properties of metal organic chemical vapour deposited zirconiumdioxide as dielectric material for SCM was explored. Usage ofzirconium dioxide leads to reduced leakage currents andimproved signal quality. (2) focussed ion beam induced damage insilicon was investigated with SCM. The beam shape and the rangeof ion damage inside the sample was investigated. The SCMdata were compared with transmission electron microscopy data.(3) a setup for quantitative Scanning Capacitance Spectroscopywith an external capacitance bridge connected to an atomic forcemicroscope was designed. This setup is sensitive enough to resolvethe energetic distribution of interface trapped charges and toquantitatively measure the local oxide charge density distributionof zirconium dioxide layers.

    Author

    Wolfgang Brezna

    Binding

    Paperback

    EAN

    9783838102672

    ISBN

    3838102673

    Label

    Südwestdeutscher Verlag für Hochschulschriften

    Manufacturer

    Südwestdeutscher Verlag für Hochschulschriften

    NumberOfPages

    156

    ProductGroup

    Book

    ProductTypeName

    ABIS_BOOK

    PublicationDate

    2009-01-20

    Publisher

    Südwestdeutscher Verlag für Hochschulschriften

    ReleaseDate

    2009-01-20

    Studio

    Südwestdeutscher Verlag für Hochschulschriften

    Scanning Capacitance Microscopy: and Spectroscopy on Semiconductor Materials (German Edition)

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